Sartoris, Guido Ettore

Guido Ettore Sartoris

Guido Ettore Sartoris
A Hybrid Finite Element Method to Solve the Stationary Semiconductor Equations Including Galvanometric Effects

Following the discovery of the bipolar transistor and the development of the MOS transistor the need for numerical models to simulate the physical behaviour of semi-conductors grew considerably. The tasks involved are complex and many models and discretization methods have been proposed. The drift-diffusion model is one of the simplest but is nevertheless of great importance. Conventional discretization methods are unsuitable for obtaining a solution and in addition the computing time required to produce results of acceptable accuracy is too great.

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